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 v00.0404
MICROWAVE CORPORATION
HMC463LP5
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
Features
Gain: 13 dB Noise Figure: 2.8 dB @ 10 GHz P1dB Output Power: +18 dBm @ 10 GHz Supply Voltage: +5.0V @ 60 mA 50 Ohm Matched Input/Output 25 mm2 Leadless Package
8
AMPLIFIERS - SMT
Typical Applications
The HMC463LP5 is ideal for: * Telecom Infrastructure * Microwave Radio & VSAT * Military EW, ECM & C3I * Test Instrumentation * Fiber Optics
Functional Diagram
General Description
The HMC463LP5 is a GaAs MMIC PHEMT Low Noise AGC Distributed Amplifier packaged in a leadless 5 x 5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 13 dB of gain, 3.0 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 8 dB typical. Gain flatness is excellent at 0.5 dB from 6 - 18 GHz making the HMC463LP5 ideal for EW, ECM RADAR and test equipment applications. The HMC463LP5 LNA I/Os are internally matched to 50 Ohms and are internally DC blocked.
Vgg2: Optional Gate Bias for AGC
Electrical Specifications, TA = +25 C, Vdd= 5V, Idd= 60 mA*
Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) (Vdd= 5V, Vgg1= -0.9V Typ.) 16 10 Min. Typ. 2.0 - 6.0 13 0.5 0.010 3.0 15 13 19 21 30 60 11 0.015 4.0 9 Max. Min. Typ. 6.0 - 18.0 12 0.5 0.010 3.0 13 10 16 19 24 60 10 0.015 5.0 8 Max. Min. Typ. 18.0 - 20.0 11 0.5 0.010 5.5 12 10 12 19 22 60 0.015 6.5 Max. Units GHz dB dB dB/ C dB dB dB dBm dBm dBm mA
* Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0404
MICROWAVE CORPORATION
HMC463LP5
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
GaAs MMIC PUMPED MIXER Gain & Return LossSUB-HARMONICALLY Gain vs. Temperature
20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
S21 S11 S22
17 - 25 GHz
20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -40C
8
AMPLIFIERS - SMT
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Input Return Loss vs. Temperature
0 INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -40C
Output Return Loss vs. Temperature
0 OUTPUT RETURN LOSS (dB)
+25C +85C -40C
GAIN (dB)
-5
-10
-15
-20 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 -5 REVERSE ISOLATION (dB) -10 -20 -25 -30 -35 -40 -45 -50 -55 -60 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -40C
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -40C
-15
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0404
MICROWAVE CORPORATION
HMC463LP5
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
8
AMPLIFIERS - SMT
GaAs MMIC SUB-HARMONICALLY Psat vs. Temperature PUMPED MIXER P1dB vs. Temperature
26 24 22 20 P1dB (dBm) Psat (dBm) 18 16 14 12 10 8 6 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -40C
17 - 25 GHz
26 24 22 20 18 16 14 12 10 8 6 0 2 4 6 8 10 12 14 16 18 20 22
+25C +85C -40C
FREQUENCY (GHz)
Output IP3 vs. Temperature
32 30 28 OIP3 (dBm) 26 24 22 20 18 16 14 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz)
+25C +85C -40C
Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1
24 GAIN (dB), P1dB (dBm), Psat (dBm) 22 20 18 16 14 12 10 8 6 4.5 5 Vdd (Vdc)
Noise Figure Gain P1dB Psat
4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 5.5 Noise Figure (dB)
Gain, P1dB & Output IP3 vs. Control Voltage @ 10 GHz
32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 GAIN (dB), P1dB (dBm), OIP3 (dBm)
Noise Figure & Supply Current vs. Control Voltage @ 10 GHz
75 70 65 60 55 Idd (mA) 50 45 40
Gain P1dB OIP3
5.5 5 4.5 4 3.5 3 2.5 2 1.5 1
Idd Noise Figure
NOISE FIGURE (dB)
35 30 25 20 1
0.5 0
0
0.2 0.4 0.6 0.8
-1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
1
Vgg2 (Vdc)
Vgg2 (Vdc)
8 - 264
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0404
MICROWAVE CORPORATION
HMC463LP5
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
Gain @ Several Control Voltages
18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 0 2 4 6
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2)(AGC) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature +9.0 Vdc -2.0 to 0 Vdc (Vdd -9.0) Vdc to +2.0 Vdc +23 dBm 150 C 3.25 W 20 C/W -65 to +150 C -40 to +85 C
8
AMPLIFIERS - SMT
8 - 265
GAIN (dB)
Vgg-1.3 V Vgg=-1.2 V Vgg=-1.1 V Vgg=-1.0V Vgg=-0.9 V
Vgg=-0.8 V Vgg=-0.6 V Vgg=-0.4 V Vgg=-0.2 V Vgg=0 V
Continuous Pdiss (T= 85 C) (derate 50 mW/C above 85 C) Thermal Resistance (channel to ground paddle)
8
10
12
14
16
18
20
22
Storage Temperature Operating Temperature
FREQUENCY (GHz)
Typical Supply Current vs. Vdd
Vdd (V) +4.5 +5.0 Idd (mA) 58 60 62
Outline Drawing
+5.5
NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0404
MICROWAVE CORPORATION
HMC463LP5
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
8
AMPLIFIERS - SMT
Pad Descriptions
Pad Number 1, 3, 4, 6-14, 16-20, 22-29, 31, 32 Function Description No connection. These pins may be connected to RF ground. Performance will not be affected. Interface Schematic
N/C
2
Vgg2
Optional gate control if AGC is required. Leave Vgg2 open circuited if AGC is not required.
5
RFIN
This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz
15
Vgg1
Gate control for amplifier. Adjust to achieve Idd= 60 mA.
21
RFOUT
This pad is AC coupled and matched to 50 Ohms from 2.0 - 20.0 GHz
30
Vdd
Power supply voltage for the amplifier. External bypass capacitors are required
Ground Paddle
GND
Grpund paddle must be connected to RF/DC ground.
8 - 266
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0404
MICROWAVE CORPORATION
HMC463LP5
GaAs PHEMT MMIC LOW NOISE AGC AMPLIFIER, 2.0 - 20.0 GHz
Evaluation PCB
8
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 108341*
Item J1 - J2 J3 - J4 C1 - C3 C4 - C6 C7 - C8 U1 PCB** Description SRI K Connector 2 mm Molex Header 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 4.7 F Capacitor, Tantalum HMC463LP5 107339 Evaluation PCB
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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